In parallel with CMC development, although at a slightly staggered timeline, we are developing a secondary sputtering process that would:

Reduce or eliminate sputter process arcing caused by grain boundaries
Increase process deposition rates by reducing required sputtering energies
Improve process stability by utilizing high purity materials and minimal mechanical processing
Full density materials adhered directly to a stainless-steel backing tube
Maximizes thermal conductivity by eliminating bonding layers
Improve pure metal rotary target structural rigidity

Patent #: WO 2019/1111 83 A1

Junora has an exclusive world-wide license for the process, developed by Patrick Morse